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China, Chinese Ultra High Efficiency Silicon Carbide Cooling Substrate for Power Applications1 Industrial Products Supplier Manufacturer Details, price list catalog:
China Industrial Products Supplier Manufacturer List Catalog
Nonmetallic MineralsSilicon CarbideUltra High Efficiency SubstrateSilicon Carbide Substrate
Shanghai Rui Tai Photoelectric Technology Co., Ltd.
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Product Description Product DescriptionThe RAYTEK semi-insulated silicon carbide (SiC) cooling substrate utilizes a 99.999% ultra-high purity semi-insulating silicon carbide single crystal substrate, combined with self-developed laser lift-off technology and atomic layer deposition (ALD) process, to achieve the perfect balance of 400W/mK thermal conductivity and 10^8 Ω·cm ultra-high resistivity. The product has passed ISO 26262 automotive certification and MIL-STD-810H military standard testing, specifically designed for extreme environments such as 5G base station RF modules, 800V high-voltage vehicle inverters, and satellite communication systems, addressing the thermal dissipation bottlenecks and electrical insulation challenges of traditional ceramic substrates.Applications1.5G and Satellite Communication Base Station Power Amplifier: Supports GaN-on-SiC HEMT devices for operation in frequency bands exceeding 20 GHz, achieving a 20% reduction in signal loss and a 40% reduction in the size of the cooling system. 2.Spaceborne RadarSuccessfully passed thermal cycle testing from -55°C to +200°C, demonstrating a tenfold increase in radiation resistance, making it ideal for low-orbit satellite constellations. 3.New Energy Vehicles 800V Vehicle Inverter: Equipped with SiC MOSFET modules, this inverter achieves an efficiency of up to 99%, extends battery range by 8%, and increases charging speed by 20%. 4.Supercharged Charging PileIn a 480kW fast-charging scenario, the substrate surface temperature is reduced by 20%, and equipment lifespan is extended threefold. 5.Industry and Energy Photovoltaic Inverter: Capable of withstanding temperatures up to 150°C, this inverter increases power generation by 10% and is compatible with 1500V high-voltage systems. 6.Data Center Power SupplyProvides high-density server power modules, reducing energy consumption by 15% and improving heat dissipation efficiency by 50%. 7.Aerospace Missile Guidance System: Underwent nuclear electromagnetic pulse (EMP) immunity testing to ensure signal stability in extreme environments. 8.UAV Power ControlFeatures lightweight design (density 3.2g/cm3) and high mechanical strength (bending strength 400MPa). Detailed PhotosOur Advantages1.Material Innovation - Atomic-level purity control: Silicon carbide (SiC) crystals are grown using the physical vapor transport (PVT) method, ensuring an impurity content of less than 1 ppm. This process maximizes the intrinsic thermal conductivity of the material. - Semi-insulating properties: A resistivity of 10^8 Ω·cm is achieved through a nitrogen doping process, meeting the stringent signal isolation requirements of radio frequency (RF) devices. 2.Manufacturing Process - Laser stripping technology: In-house developed 8-inch automated SiC ingot laser stripping equipment enables ultra-thin wafer processing with a thickness of 130 μm. The resulting surface roughness (Ra) is less than 0.1 nm, and the interface thermal resistance is reduced by 50%. - Nanometer metallization: Atomic layer deposition (ALD) technology is employed to deposit a 50-nm thick gold/silver/copper metal layer. Combined with photolithography processes, this achieves electrode patterns with a line width of 20 μm, suitable for advanced packaging technologies such as direct bonded copper (DBC) and active metal brazing (AMB). 3.Structural Design - Stacked DBC solution: An innovative four-layer conductive stacking design increases the number of parallel chips by 50% while reducing parasitic inductance by 15%. This design supports double-sided pin-fin direct welding heat dissipation. - Microchannel integration: Integrated 100 μm × 100 μm microchannels, combined with a liquid cooling system, reduce the junction temperature by 30%, making it ideal for high-power applications such as 480 kW supercharging stations. Product ParametersIndex Numerical valueThermal conductivity(W/mK)270Electrical resistivity(Ω.cm)>10^8Relative dielectric constant40.0Disruptive electric field strength/(kV.mm^-1)0.7Coefficient of thermal expansion(CTE)4.0*10^-6oCBending strength(MPa)400Surface roughness0.1umTTV<5umOperating temperature range-60oC~+250oCAfter Sales ServiceMain Export Countries & Areas:USA, UK, Japan, Germany, Spain, France, Swiss, Korea, Russia, Mexico, Brazil, Argentina, Pakistan, India, Portugal, Canada, New Zealand, South Africa, UAE, Egypt, Norway, Netherland, Russia, Australia, Saudi Arab, Turkey, Finland, Poland ,etc.Payment Method: by T/T or Western Union or L/CDelivery time: 7-10 days.Quality Warranty: Shanghai Z-printing offers quality warranty for our lasers products with "3R" policy. For any inferior-quality products, Z-printing company is responsible for return, replacement and refund.For specific installation and operation, please refer to the product manual or contact customer service for operation tips or videos after receiving the product. The equipment is guaranteed for one year, and artificial or abnormal damage is not covered by the warranty. If it exceeds one year, a certain fee will be charged for the relevant after-sales service. This device will continue to be optimized and improved due to various factors. At that time, please pardon us not notify separately. Thank you for your support and understanding.
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