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China, Chinese Solar Inverter Vds-80V ID-840A RDS (ON) -2.6milliohm Qg-148.1nc To263 Sfg280n08kf N-Channel Mosfet1 Industrial Products Supplier Manufacturer Details, price list catalog:
China Industrial Products Supplier Manufacturer List Catalog
Solar Renewable EnergySolar ChargerHigh Voltage Semiconductor MosfetMode N-Channel Semiconductor Power Mosfet
Shanghai Winture Electric Co., Ltd.
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Product Description General DescriptionThe GreenMOS? high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.The GreenMOS? SuperSi series is based on Oriental Semiconductor's unique device design to achieve extremely fast switching characteristics. It is the perfect replacement for the Gallium Nitride (GaN) device in high frequency operations with better ruggedness and cost. It is targeted to meet the most aggressive efficiency standards of power supply systems by pushing both performance and power density to extreme limits.Features Low RDS(ON) & FOMExtremely low switching lossExcellent stability and uniformityEasy to design inApplicationsPD chargerLarge screen displayTelecom powerServer powerKey Performance Parameters ParameterValueUnitVDS, min @ Tj(max)700VID, pulse36ARDS(ON), max @ VGS=10V340mΩQg9.6nCMarking Information Product NamePackageMarkingOSS65R340JFPDFN8×8OSS65R340JAbsolute Maximum Ratings at Tj=25°C unless otherwise noted ParameterSymbolValueUnitDrain-source voltageVDS650VGate-source voltageVGS±30VContinuous drain current1), TC=25 °CID12AContinuous drain current1), TC=100 °C7.6Pulsed drain current2), TC=25 °CID, pulse36AContinuous diode forward current1), TC=25 °CIS12ADiode pulsed current2), TC=25 °CIS, pulse36APower dissipation3), TC=25 °CPD83WSingle pulsed avalanche energy5)EAS200mJMOSFET dv/dt ruggedness, VDS=0…480 Vdv/dt50V/nsReverse diode dv/dt, VDS=0…480 V, ISD≤IDdv/dt15V/nsOperation and storage temperatureTstg, Tj-55 to 150°CThermal Characteristics ParameterSymbolValueUnitThermal resistance, junction-caseRθJC1.5°C/WThermal resistance, junction-ambient4)RθJA62°C/WElectrical Characteristics at Tj=25°C unless otherwise specifiedParameterSymbolMin.Typ.Max.UnitTest conditionDrain-source breakdown voltageBVDSS650 VVGS=0 V, ID=250 μA700 VGS=0 V, ID=250 μA, Tj=150 °CGate threshold voltageVGS(th)2.9 3.9VVDS=VGS, ID=250 μADrain-source on- state resistanceRDS(ON) 0.300.34ΩVGS=10 V, ID=6 A 0.73 VGS=10 V, ID=6 A, Tj=150 °CGate-source leakage currentIGSS 100nAVGS=30 V -100VGS=-30 VDrain-source leakage currentIDSS 1μAVDS=650 V, VGS=0 VDynamic CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionInput capacitanceCiss 443.5 pFVGS=0 V, VDS=50 V, ?=100 KHzOutput capacitanceCoss 59.6 pFReverse transfer capacitanceCrss 1.7 pFTurn-on delay timetd(on) 22.4 nsVGS=10 V, VDS=400 V, RG=2 Ω, ID=6 ARise timetr 17.5 nsTurn-off delay timetd(off) 40.3 nsFall timetf 7.2 nsGate Charge CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionTotal gate chargeQg 9.6 nCVGS=10 V, VDS=400 V, ID=6 AGate-source chargeQgs 2.2 nCGate-drain chargeQgd 4.5 nCGate plateau voltageVplateau 6.5 VBody Diode CharacteristicsParameterSymbolMin.Typ.Max.UnitTest conditionDiode forward voltageVSD 1.3VIS=12 A, VGS=0 VReverse recovery timetrr 236.5 nsVR=400 V, IS=6 A,di/dt=100 A/μsReverse recovery chargeQrr 2.2 μCPeak reverse recovery currentIrrm 19.1 ANoteCalculated continuous current based on maximum allowable junction temperature.Repetitive rating; pulse width limited by max. junction temperature.Pd is based on max. junction temperature, using junction-case thermal resistance.The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C.VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 °C.
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