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China, Chinese Multi-Zone Controlled (plasma enhanced) Pecvd Furnace for Uniform Film Growth1 Industrial Products Supplier Manufacturer Details, price list catalog:
China Industrial Products Supplier Manufacturer List Catalog
Laboratory InstrumentsLaboratory Heating EquipmentPecvdPecvd Furnace
Luoyang Kunsheng Instrument Equipment Co.,Ltd
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Product Description Plasma Enhanced Chemical Vapor Deposition (PECVD) SystemThis Plasma Enhanced Chemical Vapor Deposition (PECVD) system is designed for the deposition of thin films at relatively low substrate temperatures, making it ideal for temperature-sensitive substrates and complex layer structures. The equipment utilizes plasma to enhance the chemical reaction rates of precursor gases, allowing for high-quality film growth with improved adhesion, uniformity, and step coverage.The system typically features a horizontal furnace chamber with precision temperature controllers, a high-vacuum pumping system, and a robust gas delivery module for reactive gases such as silane (SiH4), ammonia (NH3), and methane (CH4). Integrated RF power supply and matching network ensure stable plasma generation within the reaction chamber. The front panel includes multiple digital temperature controllers for independent zone heating, a pressure gauge, and gas flow meters or mass flow controllers for accurate gas regulation.Key Features:Uniform multi-zone heating for controlled deposition conditionsHigh-purity quartz tube or stainless steel chamber designRF plasma source for enhanced reaction kinetics at lower temperaturesIntegrated vacuum and gas flow systems with digital controlsCompatible with various precursor gases for different film types (e.g., SiO2, Si3N4, DLC)Applications:PECVD is widely used in the fabrication of microelectronic devices, MEMS, solar cells, optical coatings, and barrier layers. It enables the deposition of dielectric films, passivation layers, and encapsulation coatings essential for advanced electronic and photonic device performance.This system is an essential tool for research laboratories and production environments focused on thin film technology, providing flexibility, control, and reliability in material synthesis and surface engineering.Technical Parameters:Tube furnaceProduct modelKS-PECVD1200-60Max. temperature 1200°CWorking temperature ≤1100°CTube material Quartz tubeTube size Diameter 60mm, heating zone length 200mmVoltage 220V/50Hz/6KWHeating element Resistance wireThermocouple K typeTemperature accuracy ±1°CHeating rate ≤10°C/minTemperature control PID control and self-tuning adjustment, intelligent 30-segment programmable control, with over-temperature and break-off alarm functionGas flow meterFlow channels Three-way gas flow systemMass flow meter High-precision digital display typeFlow range 0-500 SCCM, error ≤0.02%Outlet vacuum gauge Built-in gas mixing systemValve Stainless steel needle valve meter, standard double ferrule jointRF generatorOutput power 5-500W ±1°CRF frequency 13.56 MHz ±0.005%Reflected power Up to 100WMatching AutomaticRF interface 50Ω, N-typeCooling Air coolingPower supply AC 208-240V, 50/60HzVacuum pumpPump type High vacuum molecular pump + diffusion pump unitVacuum degree 10-1Pa to 10-3PaConnection KF25 quick connectComponents Stainless steel bellows, manual flapper valve, flange, vacuum pump
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