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China, Chinese High Performance Aln Aluminium Nitride Metallized Ceramic Substrate for Power Electronics1 Industrial Products Supplier Manufacturer Details, price list catalog:
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Industrial Ceramic ProductsCeramic SubstrateMetallized Ceramic SubstrateAluminum Nitride Substrate
SHENZHEN JINGHUI INDUSTRY LIMITED
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Product Description High Performance AlN Aluminium Nitride Metallized Ceramic Substrate for Power ElectronicsProduct IntroductionMetallized ceramic substrates are key components in power electronic modules. They connect and fix multiple semiconductor devices such as SiC MOSFETs, Si IGBTs and Si diodes. The ceramic substrate acts as an insulating layer, while the metallization layer ensures its excellent electrical and thermal conductivity. Its excellent thermal and mechanical properties are essential for efficient heat dissipation, ensuring reliable operation of the module under thermal cycling conditions.Metallized aluminum nitride ceramic substrates are ideal for high-power, high-frequency electronic devices by combining the excellent thermal conductivity of AlN with the electrical conductivity of the metal layer. Main Advantages1. Ultra-high thermal conductivity, solving the heat dissipation bottleneck of high-power devices.2. Good electrical insulation, suitable for high-voltage environments.3. Lightweight (density 3.26 g/cm3), better than copper substrates.Production ProcessMetallization is the process of forming a strong metal layer (such as Cu, Au, Ag or Al) on the surface of AlN ceramics to achieve circuit connection and welding. Common methods:(1) Direct copper bonding (DBC)Process: Bond copper foil (usually 100-300μm) directly to the AlN surface at high temperature (1065°C) to form a Cu/AlN/Cu sandwich structure.Features: High thermal conductivity and high current carrying capacity, but the oxygen content must be strictly controlled to avoid interface oxidation.(2) Thin film metallizationProcess: Deposit Ti/Pt/Au or Cr/Cu thin films on the AlN surface by sputtering or evaporation, and then thicken them by electroplating.Features: High precision (line width can reach μm level), suitable for high-frequency microwave devices.(3) Thick film printingProcess: Screen print Ag-Pd or Au slurry, and form a conductive layer after high-temperature sintering (850°C).Features: Low cost, but slightly inferior to DBC in thermal conductivity and adhesion.(4) Active Metal Brazing (AMB)Process: Use a brazing material (such as Ag-Cu-Ti) containing active elements (Ti, Zr) to weld metal layers under vacuum.Features: High bonding strength, suitable for high reliability applications.Product Recommendations
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