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China, Chinese Reactive Ion Etching-Rie Machine for Silicon-Based Wafer&Cermet Film Material1 Industrial Products Supplier Manufacturer Details, price list catalog:
China Industrial Products Supplier Manufacturer List Catalog
Etching MachineRieReactive Ion Etching
Guangzhou Minder-Hightech co.,Ltd
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Product Description Reactive ionomer etching machineItemMD150-RIEMD200-RIEMD200C-RIEProduct size≤6 inches≤8 inches≤8 inchesRF power source0-300W/500W/1000W Adjustable,automatic matchingMolecular pump-/620(L/s)/1300(L/s)/CustomAntiseptic620(L/s)/1300(L/s)/CustomForeline pumpMechanical pump/dry pumpDry pumpProcess pressureUncontrolled pressure/0-1Torr controlled pressureGas typeH/CH4/O2/N2/Ar/SF6/CF4/CHF3/C4F8/NF3/Custom(Up to 9 channels, no corrosive & toxic gas)H2/CH4/O2/N2/Ar/F6/CF4/ CHF3/C4F8/NF3/Cl2/BCl3/HBr(Up to 9 channels)Gas range0~5sccm/50sccm/100sccm/200sccm/300sccm/500sccm/customLoadLockYes/NoYesSample tem control10°C~Room tem/-30°C~100°C/Custom-30°C~100°C /CustomBack helium coolingYes/NoYesProcess cavity liningYes/NoYesCavity wall tem controlNo/Roomtem~60/120°CRoom tem-60/120°CControl SystemAuto/customEtching materialSilicon-based:Si/SiO2/SiNx···IV-IV: SiCMagnetic materials/alloy materials Metallic material: Ni/Cr/Al/Au..... Organic material: PR/PMMA/HDMS/Organic film......Silicon-based: Si/SiO2/SiNx......III-V(3): InP/GaAs/GaN......IV-IV: SiCII-VI (3): CdTe......Magnetic materials/alloy materialsMetallic material: Ni/Cr/A1/Au......Organic material: PR/PMMA/HDMS /organic film...Process resultSilicon-based material etchingSilicon-based materials, nano-imprint patterns, arraypatterns and lens pattern etchingInP normal temperature etchingPattern etching of InP based devices used in optical communication, including waveguide structure, resonant cavity structure ridge structure etcSiC material etchingSuitable for microwave devices, power devices, etcPhysical sputtering, etching Organic materiale tchingIt is applied to the etching of difficult to etch materials such as some metals (such as Ni / Cr) and ceramics, and the patternede tching of materials is realized by physical bombardment.It is used for etching and removal of organic compounds such as photoresist (PR)/ PMMA / HDMS / polymerCermet film material (Au/Ni/Cr/Al2O3)
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