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China, Chinese Advanced Front End Ion Implanter for Precision Semiconductor Manufacturing Solutions1 Industrial Products Supplier Manufacturer Details, price list catalog:
China Industrial Products Supplier Manufacturer List Catalog
Chip MounterSemiconductor MaterialIon Implanter
Jiangsu Himalaya Semiconductor Co., Ltd.
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Product Description Product Description1. Product overviewIon implanter is one of the high pressure small accelerators with the largest number of applications. It is the ion source to obtain the required ions, after the acceleration of several hundred thousand electron volts energy of the ion beam, used for semiconductor materials, large-scale integrated circuits and devices ion injection, but also used for metal materials surface modification and film making.2. Device featuresThe maximum acceleration energy of univalent ion is ≥200keV, and the deceleration system is increased to achieve the energy range of univalent ion in 5keV~200keVAvailable for 2, 3, 4, 6, 8 inch wafers and irregular fragmentsB, P, As, Al, S, H, Mg, Si ions can be injectedInjection dose accuracy ≤1.5%Ion implantation dose range: 1×1011 at/cm2 ~ 1×1016 at/cm2Ion source part: ion source, ion source gas system and ion source extraction systemThe ion source system is equipped with five vaporizers that generate ions from a solid evaporation source at a temperature of 700 ° C to achieve ion implantation from a solid sourceIon implantation tilt angles are 0° and 7°Room temperature station: 0° and 7°; High temperature station: 0°Beam adjustment system mainly includes: mass analyzer, beam convergence system, acceleration system, scanning system, beam detection and high voltage insulated transformerThe vacuum system mainly includes: Ion Source vacuum system, Beam Line vacuum system, End Station vacuum system, vacuum tubes and valves in the vacuum system and vacuum detection unitVacuum degree:Ion Source vacuum: ≤7×10-4PaBeam Line vacuum: ≤7×10-5PaEnd Station vacuum: ≤7×10-5Pa Ion Implanter System SpecificationsCategorySpecification / FeatureMaximum Acceleration≥ 200 keV (for univalent ions)Energy Range5 keV to 200 keV (achieved via a deceleration system)Wafer Compatibility2", 3", 4", 6", 8" wafers, and irregular fragmentsSupported IonsB, P, As, Al, S, H, Mg, SiDose Accuracy≤ 1.5%Dose Range1×1011 at/cm2 to 1×1015at/cmIon Source System- Type: Solid evaporation source (700°C)- Capacity: 5 vaporizers- Includes: Extraction system & gas systemImplantation Angles- Room Temperature: 0° & 7°- High Temperature: 0° onlyBeam Adjustment SystemMass analyzer, beam convergence, acceleration, scanning, beam detection, HV transformerVacuum System- Ion Source: ≤ 7×10-4 Pa- Beam Line: ≤ 7×10-5Pa- End Station: ≤ 7×10-5 PaKey ComponentsVacuum tubes/valves, vacuum detection unit Detailed Photos Exhibition & CustomersField Application FAQQ1:How to choose a suitable machine?A1:You can tell us the working piece material, size, and the request of machine function. We can recommend the most suitable machine according to our experience. Q2:What is the warranty period for the equipment?A2:One year warranty and 24 hours online professional technical support.Q3:How to choose a suitable machine?A3:You can tell us the request of machine function. We can recommend the most suitable machine according to our experience.
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